Effect of high magnetic field on transistor characteristics with applications to SEU testing

Abstract

Transistor characteristics are modified by the application of high magnetic fields. These changes are due to Hall effect voltages or magnetoresistance. Translations of device characteristics can be modeled by connecting voltage or current sources in series/parallel with the device. These translations are similar to the effect of ionizing radiation creating a plasma column in the device. This results in deterioration of device performance due to lowered noise margins in digital circuits. Because of the similarities of these effects, the magnetic field can, with some advantages, replace ionizing radiation in simulating single event upset (SEU) testing.