E. Abramov, M. Evzelman, Or Kirshenboim, Tom Urkin, M. Peretz
{"title":"Low voltage sub-nanosecond pulsed current driver IC for high-resolution LIDAR applications","authors":"E. Abramov, M. Evzelman, Or Kirshenboim, Tom Urkin, M. Peretz","doi":"10.1109/APEC.2018.8341090","DOIUrl":null,"url":null,"abstract":"This paper introduces a new low voltage sub-nanosecond monolithic pulsed current driver for light detection and ranging (LIDAR) applications. Unique architecture based on a controlled current source and Vernier activation sequence, combined with a monolithic implementation that allows operation with low input voltage levels, high-resolution pulse width and sub-nanosecond rise and fall times. An on-chip low voltage pulsed driver sub-nanosecond prototype has been implemented in a TS 0.18-μm 5V-gated power management process. It incorporates an integrated wide range sesnseFET based current sensor and a rail-to-rail comparator for current regulation. To characterize the avalanche capabilities of the integrated lateral MOSFET power devices required for the driver IC, a separate line of investigation has been carried out. Several lateral diffused MOS (LDMOS) power devices have been custom designed and experimentally evaluated for a life-cycle performance characterization. Post-layout analysis of the power driver IC is in a good agreement with the theoretical predictions. For a 5V input voltage, rise and fall times of the laser pulse light output are on the order of hundreds of picoseconds, with currents up to 5A. To validate the concept of high-resolution pulse width generation and short fall time, a discrete prototype has been constructed and experimentally tested.","PeriodicalId":113756,"journal":{"name":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Applied Power Electronics Conference and Exposition (APEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.2018.8341090","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
This paper introduces a new low voltage sub-nanosecond monolithic pulsed current driver for light detection and ranging (LIDAR) applications. Unique architecture based on a controlled current source and Vernier activation sequence, combined with a monolithic implementation that allows operation with low input voltage levels, high-resolution pulse width and sub-nanosecond rise and fall times. An on-chip low voltage pulsed driver sub-nanosecond prototype has been implemented in a TS 0.18-μm 5V-gated power management process. It incorporates an integrated wide range sesnseFET based current sensor and a rail-to-rail comparator for current regulation. To characterize the avalanche capabilities of the integrated lateral MOSFET power devices required for the driver IC, a separate line of investigation has been carried out. Several lateral diffused MOS (LDMOS) power devices have been custom designed and experimentally evaluated for a life-cycle performance characterization. Post-layout analysis of the power driver IC is in a good agreement with the theoretical predictions. For a 5V input voltage, rise and fall times of the laser pulse light output are on the order of hundreds of picoseconds, with currents up to 5A. To validate the concept of high-resolution pulse width generation and short fall time, a discrete prototype has been constructed and experimentally tested.