A 48/spl times/48 CdZnTe array with multiplexer readout

1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record Pub Date : 1995-10-21 DOI:10.1109/NSSMIC.1995.510377

D. G. Marks, H. B. Barber, H. Barrett, E. Dereniak, J. Eskin, K. Matherson, J. Woolfenden, E. Young, F. Augustine, W. Hamiltons, J. Venzon, B. Apotovsky, F. P. Dotys

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引用次数: 31

Abstract

We report results of gamma-ray imaging and energy-resolution tests of a 48/spl times/48 CdZnTe array. Our detectors have 125 /spl mu/m square pixel electrodes produced by photolithography and are indium-bump-bonded to multiplexer readout circuit. Using a collimated beam of 140 keV gamma rays of 120 /spl mu/m diameter centered on one pixel, we found that the majority of events produced significant charge deposition in nearby pixels. Charge and energy are transported out of the pixel by charge diffusion, photoelectron range, Compton scattering, and escape of K X-rays. These effects also distort single-pixel spectra, although photopeaks are still discernible at 140 keV. When signals from neighboring pixels are summed together to correct for this charge spreading, an energy resolution of 10 keV is obtained at 140 keV. Corrections will be simpler and energy resolution should be better for the 380 /spl mu/m pixels of the 64/spl times/64 CdZnTe arrays we are constructing for an ultra-high-resolution brain imager.

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一个48/spl倍/48 CdZnTe阵列，具有多路复用读出

本文报道了48/spl倍/48 CdZnTe阵列的伽玛射线成像和能量分辨率测试结果。我们的探测器采用光刻技术生产125 /spl mu/m平方像素电极，并与多路复用器读出电路进行铟碰撞键合。使用直径为120 /spl mu/m的140 keV伽马射线的准直光束以一个像素为中心，我们发现大多数事件在附近的像素产生显著的电荷沉积。电荷和能量通过电荷扩散、光电子范围、康普顿散射和K - x射线的逸出传递出像素。这些影响也会扭曲单像素光谱，尽管在140千伏时仍然可以看到光峰。当来自相邻像素的信号加在一起以纠正这种电荷扩散时，在140 keV下获得10 keV的能量分辨率。对于我们正在为超高分辨率脑成像仪构建的64/spl倍/64 CdZnTe阵列的380 /spl μ /m像素，校正将更简单，能量分辨率应该更好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record

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