Photon-number-resolving capabilities of a semiconductor quantum dot, optically gated, field-effect transistor

2007 Quantum Electronics and Laser Science Conference Pub Date : 2007-05-06 DOI:10.1109/QELS.2007.4431640

E. Gansen, M. Rowe, M. Greene, D. Rosenberg, T. Harvey, M. Su, R. Hadfield, Sae Woo Nam, R. Mirin

引用次数: 0

Abstract

We demonstrate the photon-number-resolving capabilities of a novel quantum dot, optically gated, field-effect transistor cooled to 4 K. Peaks are observed in the detector¿s response to highly attenuated laser pulses in accordance with Poisson statistics.

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半导体量子点、光门控、场效应晶体管的光子数分辨能力

我们展示了一种新型量子点，光门控，场效应晶体管冷却到4 K的光子数分辨能力。根据泊松统计量，在探测器对高度衰减的激光脉冲的响应中观察到峰值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 Quantum Electronics and Laser Science Conference

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