A novel CVD polymeric anti-reflective coating (PARC) for DRAM, flash and logic device with 0.1 /spl mu/m CoSi/sub 2/ gate

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852764

K. Linliu, Mai-Rue Kuo, Yi-Ren Huang, Shu-Chun Lin, S. Jeng, Chunshing Chen

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引用次数: 1

Abstract

A novel CVD polymeric anti-reflective coating (PARC) process has been developed for KrF lithography. The refractive index, n, and extinction coefficient, k, of PARC are tuned to match the optical properties of substrates. PARC is a conformal layer of thin polymer film, which significantly improves the CD uniformity of critical layers such as Poly Si gate and other features over topography. Since PARC is a pure polymeric material, it is easily removed by the conventional dry ash process. The ease of removal of PARC from Poly Si is particularly beneficial to the formation of salicide for advanced logic devices. In this paper, PARC is used to fabricate devices with 0.1 /spl mu/m CoSi/sub 2/ gate. Furthermore, the etching rate of PARC is about 500% higher than that of organic BARC for DUV photoresist, so that there is less DUV resist loss during ARC open step. PARC is a useful and low-cost process to extend KrF lithography for sub-0.15 /spl mu/m devices.

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一种新型的CVD聚合物抗反射涂层(PARC)，用于0.1 /spl mu/m CoSi/sub 2/栅极的DRAM、闪存和逻辑器件

提出了一种用于KrF光刻的新型CVD聚合物抗反射涂层(PARC)工艺。对PARC的折射率n和消光系数k进行了调整，以匹配衬底的光学特性。PARC是一种薄聚合物薄膜的保形层，它显著提高了诸如多晶硅栅极等关键层在地形上的CD均匀性。由于PARC是一种纯聚合物材料，它很容易被传统的干灰法去除。从多晶硅中去除PARC的容易性特别有利于高级逻辑器件中水杨酸的形成。本文采用PARC技术制作了0.1 /spl mu/m CoSi/sub - 2/栅极器件。此外，在DUV光刻胶中，PARC的刻蚀速率比有机BARC的刻蚀速率高500%左右，因此在ARC开阶时DUV光刻胶的损耗较小。PARC是一种有用的低成本工艺，可将KrF光刻扩展到低于0.15 /spl μ m的器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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