A. Simsek, Seong-Kyun Kim, Ahmed S. H. Ahmed, R. Maurer, M. Urteaga, M. Rodwell
{"title":"A Dual-Conversion Front-End with a W-Band First Intermediate Frequency for 1-30 GHz Reconfigurable Transceivers","authors":"A. Simsek, Seong-Kyun Kim, Ahmed S. H. Ahmed, R. Maurer, M. Urteaga, M. Rodwell","doi":"10.1109/RWS.2019.8714502","DOIUrl":null,"url":null,"abstract":"We present a microwave dual-conversion frontends with a W-band first intermediate frequency (IF) for 1-30 GHz reconfigurable transceivers. The front-end consists of frequency up-conversion and down-conversion ICs using base-collector diode mixers and 4:1 local oscillator (LO) frequency multipliers. The front-ends are implemented in a 130 nm InP HBT technology. The IC was designed for a broadly tunable 1-30 GHz dual-conversion receiver using a W-band first IF. The up-conversion IC has 4-7 dB conversion loss and 20-25 dBm IIP3 from 0.1-22 GHz to W-band. Similarly, the down-conversion IC has 4-7 dB conversion loss and 20-25 dBm IIP3 converting from W-band to a 0.1-22 GHz baseband or 2nd IF. The front-end has 30 GHz spurious free RF tuning range, with $\\gt6$ dBm IIP3 using commercial off the shelf (COTS) off wafer IF filter and IF amplifier. It consumes 2.8W in the down-conversion and 3W in the up-conversion.","PeriodicalId":131330,"journal":{"name":"2019 IEEE Radio and Wireless Symposium (RWS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2019.8714502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We present a microwave dual-conversion frontends with a W-band first intermediate frequency (IF) for 1-30 GHz reconfigurable transceivers. The front-end consists of frequency up-conversion and down-conversion ICs using base-collector diode mixers and 4:1 local oscillator (LO) frequency multipliers. The front-ends are implemented in a 130 nm InP HBT technology. The IC was designed for a broadly tunable 1-30 GHz dual-conversion receiver using a W-band first IF. The up-conversion IC has 4-7 dB conversion loss and 20-25 dBm IIP3 from 0.1-22 GHz to W-band. Similarly, the down-conversion IC has 4-7 dB conversion loss and 20-25 dBm IIP3 converting from W-band to a 0.1-22 GHz baseband or 2nd IF. The front-end has 30 GHz spurious free RF tuning range, with $\gt6$ dBm IIP3 using commercial off the shelf (COTS) off wafer IF filter and IF amplifier. It consumes 2.8W in the down-conversion and 3W in the up-conversion.