High Speed Panel Level Metallization Technology

Herbert Ötzlinger, Claudia Landstorfer, T. Onishi, Christian Dunkel, Raoul Schröder
{"title":"High Speed Panel Level Metallization Technology","authors":"Herbert Ötzlinger, Claudia Landstorfer, T. Onishi, Christian Dunkel, Raoul Schröder","doi":"10.23919/ICEP.2019.8733570","DOIUrl":null,"url":null,"abstract":"New microelectronics applications such as smartphones, automotive computing and server/AI CPUs heavily rely on wafer-level packaging (WLP) to meet performance targets. To meet future cost targets as well, Outsourced Semiconductor Assembly and Test (OSAT) foundries look to panel level packaging (PLP) for significant cost reduction. One of the most difficult parameters for PLP is to establish an economical process for 2/2μm line/space fine line plating with good deposition speed as well as good uniformity. Due to the different handling and panel plating equipment originating from the PCB industry, target line/space dimensions were typically 20/20μm down to 10/10μm, which was easier to achieve considering the lack of rotational movement, large substrate size and substrate surface quality.We present the successful scaling of high speed, extremely uniform plating technology from horizontal wafer plating to vertical panel plating. Using the patented high speed plate technology, we are capable to inject cation-rich electrolyte very close to the substrate surface, with the possibility of disturbing and breaking the surface boundary layer. Within the same plate, we have electrolyte removal holes that allow a direct path to the anode, which allows for uniform electrical fields within 5% all over the substrate surface.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

New microelectronics applications such as smartphones, automotive computing and server/AI CPUs heavily rely on wafer-level packaging (WLP) to meet performance targets. To meet future cost targets as well, Outsourced Semiconductor Assembly and Test (OSAT) foundries look to panel level packaging (PLP) for significant cost reduction. One of the most difficult parameters for PLP is to establish an economical process for 2/2μm line/space fine line plating with good deposition speed as well as good uniformity. Due to the different handling and panel plating equipment originating from the PCB industry, target line/space dimensions were typically 20/20μm down to 10/10μm, which was easier to achieve considering the lack of rotational movement, large substrate size and substrate surface quality.We present the successful scaling of high speed, extremely uniform plating technology from horizontal wafer plating to vertical panel plating. Using the patented high speed plate technology, we are capable to inject cation-rich electrolyte very close to the substrate surface, with the possibility of disturbing and breaking the surface boundary layer. Within the same plate, we have electrolyte removal holes that allow a direct path to the anode, which allows for uniform electrical fields within 5% all over the substrate surface.
高速板级金属化技术
新的微电子应用,如智能手机、汽车计算和服务器/AI cpu,严重依赖于晶圆级封装(WLP)来满足性能目标。为了满足未来的成本目标,外包半导体组装和测试(OSAT)代工厂寻求面板级封装(PLP)以显着降低成本。建立一种经济、快速、均匀的2/2μm线/空间细线电镀工艺是PLP的难点之一。由于来自PCB行业的不同处理和面板电镀设备,目标线/空间尺寸通常从20/20μm到10/10μm,考虑到没有旋转运动,基板尺寸大,基板表面质量好,更容易实现。我们成功地实现了从水平晶圆镀到垂直板镀的高速、极均匀的电镀技术。采用专利的高速板技术,我们能够将富含阳离子的电解质注入非常接近衬底表面的地方,具有干扰和打破表面边界层的可能性。在同一板内,我们有电解液去除孔,允许直接路径到阳极,这允许均匀电场在基材表面的5%以内。
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