Highly red luminescence properties from ternary ZnCdTe quantum dots

Abstract

This paper reports the synthesis of ternary ZnCdTe quantum dots (QD) system with highly luminescent in the red region. The ternary QD system was prepared by quick injection of trioctylphosphine telluride (TOPTe) into a reactor that contains a hot mixed cadmium and zinc precursors, trioctylphosphine oxide and oleic acid at temperature of as low as 300°C. After the injection of TOPTe, the reaction was left undisturbed for a period of time to facilitate the growth of QDs and then quenched the reaction at a certain period of time. Photoluminescence analysis found that the ZnCdTe QDs exhibited highly luminescent properties with the quantum yield was calculated as high as ca. 60%. The emission wavelength was found to be in the range of 640 to 675 nm. It was also found that the QDs showed a relatively narrow spectral width, namely ca. 28 nm, reflecting a narrow quantum dots size distribution. Owing to their interesting photoluminescence properties, the ternary ZnCdTe QDs should find an extensive used in light-emitting diode, solar cell, laser and biolabelling.