Novel current limit circuitry for LDOs

C. Pleşa, C. Răducan, M. Neag, B. Dimitriu
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引用次数: 2

Abstract

This paper presents a novel circuit implementation for overcurrent protection of low-dropout voltage regulators, that is able to limit the maximum current the regulator can source into the load to a value set by the user and to keep the current limit value fairly independent of process variation and output voltage, as well as maintaining its temperature drift over the wide temperature range of −50°C to +185°C to below 15%. This is achieved by using an open loop Widlar bandgap structure supplied by an additional current branch, placed in parallel with the power transistor. Design equations are presented in the paper along with electro-thermal simulations that identify the hot spots of the power transistor, thus optimizing the placement of the sense transistor and improving the current sensing accuracy. The proposed circuit is implemented in a standard bipolar junction transistor process. Measurement results — including thermal test scenarios are in good correlation with simulations, thus validating the design.
ldo的新型限流电路
本文提出了一种新颖的低压降稳压器过流保护电路实现,它能够将稳压器输入负载的最大电流限制在用户设定的值,并保持电流限值与工艺变化和输出电压相当独立,以及在−50°C至+185°C的宽温度范围内保持其温度漂移低于15%。这是通过使用一个开环Widlar带隙结构来实现的,该结构由一个额外的电流支路提供,与功率晶体管并联。本文给出了设计方程,并进行了电热仿真,确定了功率晶体管的热点,从而优化了感测晶体管的位置,提高了电流感测精度。所提出的电路是在标准的双极结晶体管工艺中实现的。测量结果(包括热测试场景)与模拟结果具有良好的相关性,从而验证了设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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