Rom: Read Only Memory

张超
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引用次数: 0

Abstract

The invention relates to an ROM (Read-Only Memory). A readout amplification circuit of the ROM comprises a control voltage circuit, a first transistor, a second transistor, a first amplifier, a second amplifier and a voltage compressor, wherein the first transistor is used for controlling the grid electrode voltage according to a source electrode current of the first transistor, the source electrode of the first transistor receives a bit line current of the memory unit, the second transistor is used for controlling the grid electrode voltage of the second transistor according to a source electrode or drain electrode current of the second transistor, the source electrode or the drain electrode of the second transistor receives a reference current of the readout amplification circuit, the first amplifier is connected with the feedback end of the first transistor, the second amplifier is connected with the feedback end of the second transistor, and the voltage compressor is used for comparing the grid electrode voltages of the first transistor and the second transistor and outputting data stored in the memory unit. The ROM provided by the invention enables the memory unit to keep a stable bit line voltage corresponding to a power supply voltage, a relatively stable readout speed and low power consumption.
只读存储器
本发明涉及一种ROM(只读存储器)。所述ROM的读出放大电路包括控制电压电路、第一晶体管、第二晶体管、第一放大器、第二放大器和电压压缩器,所述第一晶体管用于根据所述第一晶体管的源电极电流控制栅极电压,所述第一晶体管的源电极接收所述存储单元的位线电流;所述第二晶体管用于根据所述第二晶体管的源极或漏极电流控制所述第二晶体管的栅极电压,所述第二晶体管的源极或漏极接收读出放大电路的参考电流,所述第一放大器与所述第一晶体管的反馈端连接,所述第二放大器与所述第二晶体管的反馈端连接;所述电压压缩器用于比较所述第一晶体管和所述第二晶体管的栅极电压并输出存储在所述存储单元中的数据。本发明提供的ROM使存储单元能够保持与电源电压相对应的稳定位线电压,具有相对稳定的读出速度和较低的功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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