{"title":"Rom: Read Only Memory","authors":"张超","doi":"10.34074/scop.1018018","DOIUrl":null,"url":null,"abstract":"The invention relates to an ROM (Read-Only Memory). A readout amplification circuit of the ROM comprises a control voltage circuit, a first transistor, a second transistor, a first amplifier, a second amplifier and a voltage compressor, wherein the first transistor is used for controlling the grid electrode voltage according to a source electrode current of the first transistor, the source electrode of the first transistor receives a bit line current of the memory unit, the second transistor is used for controlling the grid electrode voltage of the second transistor according to a source electrode or drain electrode current of the second transistor, the source electrode or the drain electrode of the second transistor receives a reference current of the readout amplification circuit, the first amplifier is connected with the feedback end of the first transistor, the second amplifier is connected with the feedback end of the second transistor, and the voltage compressor is used for comparing the grid electrode voltages of the first transistor and the second transistor and outputting data stored in the memory unit. The ROM provided by the invention enables the memory unit to keep a stable bit line voltage corresponding to a power supply voltage, a relatively stable readout speed and low power consumption.","PeriodicalId":227354,"journal":{"name":"Scope: Contemporary Research Subjects (Art & Design 17-18)","volume":"73 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Scope: Contemporary Research Subjects (Art & Design 17-18)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.34074/scop.1018018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The invention relates to an ROM (Read-Only Memory). A readout amplification circuit of the ROM comprises a control voltage circuit, a first transistor, a second transistor, a first amplifier, a second amplifier and a voltage compressor, wherein the first transistor is used for controlling the grid electrode voltage according to a source electrode current of the first transistor, the source electrode of the first transistor receives a bit line current of the memory unit, the second transistor is used for controlling the grid electrode voltage of the second transistor according to a source electrode or drain electrode current of the second transistor, the source electrode or the drain electrode of the second transistor receives a reference current of the readout amplification circuit, the first amplifier is connected with the feedback end of the first transistor, the second amplifier is connected with the feedback end of the second transistor, and the voltage compressor is used for comparing the grid electrode voltages of the first transistor and the second transistor and outputting data stored in the memory unit. The ROM provided by the invention enables the memory unit to keep a stable bit line voltage corresponding to a power supply voltage, a relatively stable readout speed and low power consumption.