First demonstration of a high power, wide band microwave amplifier based upon an optically coupled transistor

International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301) Pub Date : 1999-11-17 DOI:10.1109/MWP.1999.819647

S. Ayling, E. Chidley, M. Evans, D. Wight, M.B. Allenson, K. Hilton, G.W. Smith, J. Roberts

引用次数: 2

Abstract

We demonstrate a microwave amplifier intrinsically broadband matched to 50 /spl Omega/ consisting of a ten element series connected laser diode array and parallel connected photodiode array delivering nearly 200 mW RF with low noise and distortion.

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基于光耦合晶体管的高功率宽带微波放大器的首次演示

我们演示了一种本质宽带匹配50 /spl ω /的微波放大器，由十元串联激光二极管阵列和并联光电二极管阵列组成，提供近200 mW的低噪声和低失真射频。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301)

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