High Performance AlGaN/GaN Schottky Barrier Diodes with Floating Gate

Abstract

In this paper, we report a high performance AlGaN/GaN Schottky barrier diodes (SBDs) with floating gate. We design a GaN SBDs with floating gate on Si substrate, fabricated in a 6-inch wafer process line. Compared with normal SBDs, the SBDs with floating gate presented almost 13% smaller turn-on voltage (VON); also, the floating gate cut down reverse current by 25%. This device structure can be widely used for GaN power devices on a large-size silicon substrate.