A model of three phase inverter hybrid IC with 60 V/150 A MOSFET

Abstract

Utilizing the insulated metal substrate technology (IMST), a new 60 V/150 A inverter IC has been developed. At present, a single substrate inverter IC is limited to 75 A for its maximum current carrying capacity, and its applications are primarily in high voltage commercial area. Power utilization of devices for such applications are relatively high and have little influence on the system performance since the supply voltage is much higher in comparison with ON-state saturation voltage of power devices. Unlikely, for battery powered applications where supply voltage and power utilization are low, thus selections of proper power devices are essential to build a better inverter system since the degree of power utilization in inverter ICs determines the performance of the inverter system. Because of the resistance of substrate pattern also has a significant influence on the system performance, the authors increased the thickness of copper foil to twice of the current models. Despite increased thickness, the authors maintained the present fine pattern pitch by the adoption of a new etching process, and succeeded the development of a new high density assembly substrate. Being able to adopt low on-resistance power devices and thick pattern traces, as a result the unit became compact and performed as per design.