The Undestroying Quality Monitoring Method for the GaAs Detector Structures

2007 Siberian Conference on Control and Communications Pub Date : 2007-04-20 DOI:10.1109/SIBCON.2007.371329

G. Ayzenshtat, M. Lelekov, O. Tolbanov, L. G. Shapoval

引用次数: 0

Abstract

We propose a new undestroying quality monitoring method for the GaAs detector structures that allows to define the charge collection efficiency. Measured life time of nonequilibrium electrons and holes is 15 and 3.3 ns, respectively.

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砷化镓探测器结构无损质量监测方法

我们提出了一种新的砷化镓探测器结构无损质量监测方法，该方法允许定义电荷收集效率。测量到的非平衡电子和空穴的寿命分别为15和3.3 ns。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 Siberian Conference on Control and Communications

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