Hyun-Woo Lee, Won-Joo Yun, Jong-Jin Lee, Ki-Han Kim, N. Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Byong-Tae Chung
{"title":"A low power and high performance robust digital delay locked loop against noisy environments","authors":"Hyun-Woo Lee, Won-Joo Yun, Jong-Jin Lee, Ki-Han Kim, N. Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Byong-Tae Chung","doi":"10.1109/ASSCC.2008.4708773","DOIUrl":null,"url":null,"abstract":"A new low power and high performance robust digital delay locked loop is presented. The DLL has dual loops with single replica block, different-type dual DCC at input and output, replay mode function, rising edge scanner and self-calibrated power down controller (SCPDC) for stable power management. The digital DLL used for multi-Gbps graphics SDRAM is fabricated using a 66 nm DRAM process technology. Experimental results show duty-corrected clock from external duty error of plusmn10%, less than 400 cycle locking time, 1.4 GHz operation frequency at 1.7 V and 1.7 GHz at 2.0 V.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A new low power and high performance robust digital delay locked loop is presented. The DLL has dual loops with single replica block, different-type dual DCC at input and output, replay mode function, rising edge scanner and self-calibrated power down controller (SCPDC) for stable power management. The digital DLL used for multi-Gbps graphics SDRAM is fabricated using a 66 nm DRAM process technology. Experimental results show duty-corrected clock from external duty error of plusmn10%, less than 400 cycle locking time, 1.4 GHz operation frequency at 1.7 V and 1.7 GHz at 2.0 V.