A 0.5V 46.2ppm°C CMOS Voltage Reference Based on Compensated ΔVTH with Wide Temperature Range and High PSRR

Linjun He, Chenchang Zhan, Yang Nan, Ning Zhang, Lidan Wang, Guofeng Li
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引用次数: 3

Abstract

This paper presents a CMOS voltage reference (CVR) with low power, high power supply ripple rejection (PSRR), and small area operating in a wide temperature range. The proposed circuit contains only MOSFETs biased in subthreshold region and operates based on compensated Δ ${\mathbf{V}}_{\mathbf{TH}}$ of two different-type transistors. Implemented in a standard 0.18$\mu \mathbf{m}$ CMOS process, the measured reference voltage of the proposed CVR is 344 mV with standard deviation of only 2.89 mV and achieves an average TC of 46.2ppm°C over a wide temperature range from - 40 °C to 125°C without individual chip-by-chip trimming. The measured PSRR is -70 dB, -51 dB and -52 dB at 10 Hz, 100 kHz and 10 MHz, respectively. The measured line sensitivity (LS) is 0.25%/V while consuming 15.65nW at 0.5V supply. The active area is 0.019$mm^{\mathbf{2}}$.
本文提出了一种低功耗、高电源纹波抑制(PSRR)、小面积、宽温度范围工作的CMOS基准电压(CVR)。该电路仅包含偏置于亚阈值区域的mosfet,并基于两个不同类型晶体管的补偿Δ ${\mathbf{V}}_{\mathbf{TH}}$工作。在标准的0.18$\mu \mathbf{m}$ CMOS工艺中实现,所提出的CVR的测量参考电压为344 mV,标准差仅为2.89 mV,在- 40°C至125°C的宽温度范围内实现平均TC为46.2ppm°C,而无需逐个芯片修剪。在10hz、100khz和10mhz时,测得的PSRR分别为-70 dB、-51 dB和-52 dB。测量的线路灵敏度(LS)为0.25%/V,在0.5V电源下消耗15.65nW。有效面积为0.019$mm^{\mathbf{2}}$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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