Device characterization of high-electron-mobility transistors with ferroelectric-gate structures

Abstract

Fabrications and characterizations of high electron-mobility transistors (HEMTs) with a ferroelectric gate (F-HEMTs) are presented. The F-HEMT is a memory device whose threshold voltage can be changed even after it is fabricated, by using remanent polarization of the ferroelectric gate. Furthermore, the F-HEMT is promising of neural network applications, because it can act as a high-speed analog memory which stores synaptic weights in a neuron circuit. From I/sub D/-V/sub G/ characteristic measurements of F-HEMTs, it is demonstrated that the threshold voltage is shifted by 0.3 V by remanent polarization. The result indicates that F-HEMTs are sufficiently applicable for the high-speed analog memory.