H. Augustin, N. Berger, S. Dittmeier, D. Immig, Dohun Kim, Lukas Mandok, A. M. González, M. Menzel, L. Noehte, I. Peri'c, A. Schmidt, A. Schoning, L. Vigani, A. Weber, Benjamin Weinlader
{"title":"MuPix10: First Results from the Final Design","authors":"H. Augustin, N. Berger, S. Dittmeier, D. Immig, Dohun Kim, Lukas Mandok, A. M. González, M. Menzel, L. Noehte, I. Peri'c, A. Schmidt, A. Schoning, L. Vigani, A. Weber, Benjamin Weinlader","doi":"10.7566/JPSCP.34.010012","DOIUrl":null,"url":null,"abstract":"Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\\times20\\,\\mathrm{mm}^2$ produced in the $180\\,\\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\\times80\\,\\mathrm{\\mu m}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\\,\\left.\\mathrm{Gbit}\\middle/\\mathrm{s}\\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an integral requirement by the Mu3e experiment since it enables the construction of ultra-thin pixel modules with $0.1\\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.","PeriodicalId":227606,"journal":{"name":"Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 29th International Workshop on Vertex Detectors (VERTEX2020)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7566/JPSCP.34.010012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{\mu m}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an integral requirement by the Mu3e experiment since it enables the construction of ultra-thin pixel modules with $0.1\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.
经过多年对高压单片有源像素传感器(HVMAPS)的研究和开发,Mu3e像素传感器的最终设计达到了高潮。MuPix10是一款全单片传感器,其有源像素矩阵尺寸为$20\times20\,\mathrm{mm}^2$,采用TSI半导体的$180\,\mathrm{nm}$ HV-CMOS工艺生产。像素大小为$80\times80\,\mathrm{\mu m}^2$。点击使用列漏架构读出,并通过多达四个串行链接发送,每个链接最多$1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$。通过DC/DC转换器和片上偏置的独家使用,MuPix10可以用最少的电气连接完全运行。这是Mu3e实验的一个不可或缺的要求,因为它使超薄像素模块的构建具有 $0.1\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.