A 5Gb/s low-power PCI express/USB3.0 ready PHY in 40nm CMOS technology with high-jitter immunity

M. Lin, Chien-Chun Tsai, Chih-Hsien Chang, Y. Peng, Tsung-Hsin Yu, Jinn-Yeh Chien, Wei-Chih Chen, Chi-Chang Lu, Wei-Chih Chen, Jimmy Fu, Shu-Chun Yang, Chien-Hung Chen, K. Deng, Chin-Hua Wen, Li-Wen Wang
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引用次数: 19

Abstract

A PCI Express 2.0/1.0 compatible SERDES system had been fabricated in TSMC 40nm CMOS technology. With the implementation of one lane transceiver, PLL, and PCS, the experimental results have shown this test chip passes PCI Express 2.0/1.0 TX compliance test and RX compliance test. It also achieves receiver jitter tolerance up to 0.33UI at BER of 10-12 with stressing all spec. specified jitter sources. A compact area of 510um×710um for one lane has been achieved while consuming only 125mW from 0.9V supply.
5Gb/s低功耗PCI express/USB3.0就绪PHY,采用40nm CMOS技术,具有高抗抖动能力
采用台积电40nm CMOS工艺制备了兼容PCI Express 2.0/1.0的SERDES系统。通过单通道收发器、锁相环和pc机的实现,实验结果表明该测试芯片通过了PCI Express 2.0/1.0 TX符合性测试和RX符合性测试。它还实现了接收机的抖动公差高达0.33UI在BER 10-12的应力所有规范指定的抖动源。一条通道的紧凑面积为510um×710um,同时从0.9V电源中仅消耗125mW。
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