Effect of metal wave function on the IV characteristics of MOS solar cell

Abstract

Results are presented which indicate that the metal wave function penetration effect cannot be neglected in calculating accurate I-V characteristics. The authors show a comparison between the variations of potential with x/d for different values of oxide layer thickness with and without considering the effect of metal wave penetration. On calculating the change in V/sub oc/ for delta =10 A/sup 0/ for a typical MOS solar cell it is observed that delta V/sub oc/ comes out to be 20.1/sup 8/ mV, which is approximately 4% of the total V/sub oc/. This points to a significant mutual wave function effect.<>