{"title":"A 1.2V 55mW 12bits self-calibrated dual-residue analog to digital converter in 90 nm CMOS","authors":"A. Zjajo, J. P. D. Gyvez","doi":"10.1109/ISLPED.2011.5993634","DOIUrl":null,"url":null,"abstract":"This paper reports design, optimization, efficiency and measurement results of the 12 bits dual-residue multi-step A/D converter. The calibration procedure based on the steepest-descent estimation method is enhanced with dedicated embedded sensors, which register on-chip process parameter and temperature variations. The prototype A/D converter with performance of 68.6 dB SNDR, 70.3 dB SNR, 78.1 dB SFDR, 11.1 ENOB at 60 MS/s has been fabricated in standard single poly, six metal 90 nm CMOS, consumes only 55 mW and measures 0.75 mm2. The on-chip calibration logic occupies an area of 0.14 mm2 and consumes 11 mW of power.","PeriodicalId":117694,"journal":{"name":"IEEE/ACM International Symposium on Low Power Electronics and Design","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/ACM International Symposium on Low Power Electronics and Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLPED.2011.5993634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper reports design, optimization, efficiency and measurement results of the 12 bits dual-residue multi-step A/D converter. The calibration procedure based on the steepest-descent estimation method is enhanced with dedicated embedded sensors, which register on-chip process parameter and temperature variations. The prototype A/D converter with performance of 68.6 dB SNDR, 70.3 dB SNR, 78.1 dB SFDR, 11.1 ENOB at 60 MS/s has been fabricated in standard single poly, six metal 90 nm CMOS, consumes only 55 mW and measures 0.75 mm2. The on-chip calibration logic occupies an area of 0.14 mm2 and consumes 11 mW of power.
本文报道了12位双残差多步A/D转换器的设计、优化、效率和测量结果。在基于最陡下降估计法的校准过程中,采用了专用的嵌入式传感器,该传感器可以记录芯片上的工艺参数和温度变化。原型A/D转换器在60 MS/s下具有68.6 dB SNDR、70.3 dB SNR、78.1 dB SFDR和11.1 ENOB的性能,其功耗仅为55 mW,尺寸为0.75 mm2。片上校准逻辑占地0.14 mm2,功耗11 mW。