35 nm CMOS FinFETs

Abstract

We demonstrate for the first time high performance 35 nm CMOS FinFETs. Symmetrical NFET and PFET off-state leakage is realized with a simple technology. For 1 volt operation at a conservative 24 /spl Aring/ gate oxide thickness, the transistors give drive currents of 1240 /spl mu/A//spl mu/m for NFET and 500 /spl mu/A//spl mu/m for PFET at an off current of 200 nA//spl mu/m. Excellent hot carrier immunity is achieved. Device performance parameters exceed ITRS projections.