Advanced process library irradiation parameter modeling and analysis techniques

Fayin Shi, Liang Wang, Qian Sang, Mengdong Shen, Yong Li, Chang Liu
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Abstract

The irradiation experimental analysis of chips can obtain irradiation data of advanced processes, which is beneficial to guide the research of new generation of anti-irradiation chips. In this paper, based on the GDS layout of the advanced process library, we firstly design the GDS layout hierarchy information extraction technology and implement the standard cell TCAD model automatic generation technology, then design the algorithm to generate irradiation parameters for heavy ion bombardment simulation experiments, and finally analyze the experimental data to establish the irradiation database. The experimental results show that it is feasible to establish an automatic irradiation data acquisition scheme based on the GDS layout of the advanced process library.
先进的工艺库辐照参数建模和分析技术
芯片的辐照实验分析可以获得先进工艺的辐照数据,有利于指导新一代抗辐照芯片的研究。本文基于先进工艺库的GDS布局,首先设计了GDS布局层次信息提取技术,实现了标准单元TCAD模型自动生成技术,然后设计了重离子轰击模拟实验辐照参数生成算法,最后对实验数据进行分析,建立辐照数据库。实验结果表明,建立基于先进工艺库GDS布局的辐照数据自动采集方案是可行的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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