Multi-peak resonant tunneling diodes based fuzzifiers

Abstract

In contrast to conventional CMOS and bipolar implementations for fuzzifier hardwares, the newly proposed fuzzifier circuits take advantage of the unique folding characteristic of one class of quantum well device, namely, the resonant tunneling diode (RTD). Three different types of RTD based fuzzifiers are proposed depending on the kinds of intrinsic I-V characteristics available. For fuzzy logic purposes, the multi-peaked RTD I-V characteristics can be generally classified as triangular, sawtooth and hysteretic types. The speed of operation, i.e. fuzzy logic inference per second (FLIPS) is expected to be high, and circuit complexity is reduced with respect to previously proposed fuzzifier circuits using conventional devices such as CMOS.<>