New hybrid structures based on CdSe/ZnS quantum dots and multilayer graphene for photonics applications

Abstract

Fabrication of novel micron-scale structures based on multi-layer graphene and quantum dots (QD) hybrids is presented. Two types of CdSe/ZnS (core/shell) QDs with diameters of 5.3 and 2.5 nm and photoluminescence peaks at 630 and 530 nm, respectively, were used. The photoresponse for illumination by a 473 nm wavelength laser was found to change polarity for these two types of QDs, being positive for larger and negative to smaller ones. The presented photo-resistive devices can be used for studies of the mechanisms responsible for photoinduced change of graphene layer conductivity in presence of QDs.