Luke R. Upton, Guénolé Lallement, M. Scott, Joyce E. S. Taylor, R. Radway, D. Rich, M. Nelson, S. Mitra, B. Murmann
{"title":"Testbench on a Chip: A Yield Test Vehicle for Resistive Memory Devices","authors":"Luke R. Upton, Guénolé Lallement, M. Scott, Joyce E. S. Taylor, R. Radway, D. Rich, M. Nelson, S. Mitra, B. Murmann","doi":"10.1109/ISQED57927.2023.10129298","DOIUrl":null,"url":null,"abstract":"Many emerging resistive memory characterization efforts are constrained to small-batch, device-level studies due to a lack of test structure read/write bandwidth. To address this issue, we present a Yield Test Vehicle (YTV) for characterizing resistive RAM (RRAM) at the array level in SkyWater’s 130 nm technology. The YTV provides 16-bit word read/write access with 7 bits (3.3 µS - 425 µS) of linear reference conductance range, and an onboard controller prevents excessive cell writes responsible for yield deterioration. The 100 mm2 YTV die has an aggregate 8.8 Mb capacity and operates at a clock frequency of up to 50 MHz. The readout’s wide input conductance dynamic range and modular peripheral circuit design allow rapid adaptation for characterizing other resistive memory technologies.","PeriodicalId":315053,"journal":{"name":"2023 24th International Symposium on Quality Electronic Design (ISQED)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 24th International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED57927.2023.10129298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Many emerging resistive memory characterization efforts are constrained to small-batch, device-level studies due to a lack of test structure read/write bandwidth. To address this issue, we present a Yield Test Vehicle (YTV) for characterizing resistive RAM (RRAM) at the array level in SkyWater’s 130 nm technology. The YTV provides 16-bit word read/write access with 7 bits (3.3 µS - 425 µS) of linear reference conductance range, and an onboard controller prevents excessive cell writes responsible for yield deterioration. The 100 mm2 YTV die has an aggregate 8.8 Mb capacity and operates at a clock frequency of up to 50 MHz. The readout’s wide input conductance dynamic range and modular peripheral circuit design allow rapid adaptation for characterizing other resistive memory technologies.