High-energy Al implantation techniques for power semiconductor devices

Abstract

A high-energy Al implantation technique has been developed for the fabrication of high-power semiconductor devices. By using an implantation energy of 0.5 MeV or higher with a dosage of 1/spl times/10/sup 15/ atoms/cm/sup 2/, we obtained a p-region profile without using a film to prevent out-diffusion.