Improving the forward current of P-N diode using soft X-ray annealing method

2013 13th International Symposium on Communications and Information Technologies (ISCIT) Pub Date : 2013-10-24 DOI:10.1109/ISCIT.2013.6645875

S. Ueamanapong, I. Srithanachai, A. Suwanchatree, S. Niemcharoen, N. Klunngien, A. Poyai

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引用次数: 1

Abstract

This paper presents a new result to improve the performance of P-N diode. The P-N diodes are fabrication using CMOS technology at TMEC. Electrical characteristics of P-N junction diode can be analyzed by current-voltage (I-V) measurement. This paper investigates X-ray irradiation by its electrical characteristics of difference X-ray exposure time. The X-ray energy use to expose 55 and 70 keV various time in the range 5-205 sec of exposure. After X-ray irradiation the forward current are increased about 3-4 orders. The series resistance and recombination lifetime are main factor for describe the change of forward current. Series resistance after X-ray irradiation with 55 and 70 keV are decreased from 10 kΩ to 5 Ω, which show that the device performance of diode are increased after X-ray irradiation. While the recombination lifetime are decreased from 55 to 48 μsec and 52 to 45 μsec at 55 and 70 keV, respectively. From the results show that soft X-ray annealing is very important to semiconductor industry.

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用软x射线退火法提高pn二极管的正向电流

本文提出了提高P-N二极管性能的新方法。P-N二极管是在TMEC使用CMOS技术制造的。P-N结二极管的电特性可以通过测量电流-电压(I-V)来分析。本文研究了x射线辐照在不同曝光时间下的电学特性。x射线能量用于暴露55和70 keV的不同时间在5-205秒的曝光范围内。经x射线照射后，正向电流增大约3-4个数量级。串联电阻和复合寿命是描述正向电流变化的主要因素。55 keV和70 keV x射线辐照后的串联电阻从10 kΩ降低到5 Ω，说明x射线辐照后二极管的器件性能有所提高。而在55 keV和70 keV下，复合寿命分别从55 μsec和52 μsec降低到45 μsec。结果表明，软x射线退火在半导体工业中具有重要的应用价值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 13th International Symposium on Communications and Information Technologies (ISCIT)

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