GaN Power Transistors Behavioral Modeling

Abstract

This paper discusses the behavioral modeling of Gallium Nitride (GaN) power transistors for the analysis of voltage/current waveforms and losses in hard-switching Switch-Mode Power Supplies (SMPSs), with main emphasis on the I-V and C-V characteristics. A new technique extending the I–V characteristics to high drain-source voltage is presented. Two different capacitance models are also compared. The proposed models are fully based on device datasheet curves and have been implemented in PathWave Advanced Design System software, allowing easy construction of symbolically defined devices. A 350 V/3 A boost converter is considered as a case study, with a half-bridge of two 650 V-30 A GaN power transistors.