A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers

J. Kawahara, A. Nakano, N. Kunimi, K. Kinoshita, Y. Hayashi, A. Ishikawa, Y. Seino, T. Ogata, H. Takahashi, Y. Sonoda, T. Yoshino, T. Goto, S. Takada, R. Ichikawa, H. Miyoshi, H. Matsuo, S. Adachi, T. Kikkawa
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Abstract

A new plasma-enhanced co-polymerization (PCP) technology is developed for low-k/Cu damascene integration on 300 mm wafers. The concept of the PCP technology is to introduce monomers, which have different functions such as matrix formation, deposition acceleration, or reinforcement, into a reactor exited with a He-plasma. It is shown that the low-k film growth rate from the matrix monomer such as divinyl siloxane-benzocyclobutene (DVS-BCB) and the elastic modulus of the deposited films are enhanced by adding a deposition acceleration monomer and a reinforcement monomer, respectively, without increasing the k-value. Combining the PCP technology with an ultra-low-pressure CMP technique, the Cu damascene interconnects were successfully fabricated on 300 mm wafers.
一种新的等离子体增强共聚合(PCP)技术用于增强300mm硅片上低k/Cu有机硅互连的力学性能
提出了一种新的等离子体增强共聚合(PCP)技术,用于300mm晶圆上的低k/Cu damascene集成。PCP技术的概念是将具有不同功能的单体(如基质形成、沉积加速或增强)引入具有he等离子体的反应器中。结果表明,在不增加k值的情况下,添加加速单体和增强单体可提高基底单体二乙烯基硅氧烷-苯并环丁烯(DVS-BCB)的低k薄膜生长速率和薄膜弹性模量。将PCP技术与超低压CMP技术相结合,成功地在300mm晶圆上制备了Cu damascene互连。
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