A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers
J. Kawahara, A. Nakano, N. Kunimi, K. Kinoshita, Y. Hayashi, A. Ishikawa, Y. Seino, T. Ogata, H. Takahashi, Y. Sonoda, T. Yoshino, T. Goto, S. Takada, R. Ichikawa, H. Miyoshi, H. Matsuo, S. Adachi, T. Kikkawa
{"title":"A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers","authors":"J. Kawahara, A. Nakano, N. Kunimi, K. Kinoshita, Y. Hayashi, A. Ishikawa, Y. Seino, T. Ogata, H. Takahashi, Y. Sonoda, T. Yoshino, T. Goto, S. Takada, R. Ichikawa, H. Miyoshi, H. Matsuo, S. Adachi, T. Kikkawa","doi":"10.1109/IEDM.2003.1269185","DOIUrl":null,"url":null,"abstract":"A new plasma-enhanced co-polymerization (PCP) technology is developed for low-k/Cu damascene integration on 300 mm wafers. The concept of the PCP technology is to introduce monomers, which have different functions such as matrix formation, deposition acceleration, or reinforcement, into a reactor exited with a He-plasma. It is shown that the low-k film growth rate from the matrix monomer such as divinyl siloxane-benzocyclobutene (DVS-BCB) and the elastic modulus of the deposited films are enhanced by adding a deposition acceleration monomer and a reinforcement monomer, respectively, without increasing the k-value. Combining the PCP technology with an ultra-low-pressure CMP technique, the Cu damascene interconnects were successfully fabricated on 300 mm wafers.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269185","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new plasma-enhanced co-polymerization (PCP) technology is developed for low-k/Cu damascene integration on 300 mm wafers. The concept of the PCP technology is to introduce monomers, which have different functions such as matrix formation, deposition acceleration, or reinforcement, into a reactor exited with a He-plasma. It is shown that the low-k film growth rate from the matrix monomer such as divinyl siloxane-benzocyclobutene (DVS-BCB) and the elastic modulus of the deposited films are enhanced by adding a deposition acceleration monomer and a reinforcement monomer, respectively, without increasing the k-value. Combining the PCP technology with an ultra-low-pressure CMP technique, the Cu damascene interconnects were successfully fabricated on 300 mm wafers.