A Pragmatic Approach to Electronically Rewritable ‘RF-Barcodes’ Based on Non-Volatile CBRAM/MIM Switching Technology

Jayakrishnan M.P, A. Vena, B. Sorli, E. Perret
{"title":"A Pragmatic Approach to Electronically Rewritable ‘RF-Barcodes’ Based on Non-Volatile CBRAM/MIM Switching Technology","authors":"Jayakrishnan M.P, A. Vena, B. Sorli, E. Perret","doi":"10.23919/URSIGASS49373.2020.9232256","DOIUrl":null,"url":null,"abstract":"In this article we present the concept of a practical approach to realization of a fully passive electronically rewritable chipless RFID tag. Integrated non-volatile and solid state Conductive Bridging Random Access Memory (CBRAM) based Metal-Insulator-Metal (MIM) switches are used to realize the rewritable functionality. A solution to the primary challenge of requirement of obtaining very low ON states resistances $(\\sim \\lt 10 \\Omega)$ in case of an RF switch, for efficient operating conditions is addressed in this paper. Here we propose a reconfigurable resonator design with a ground plane, which could operate efficiently for higher ON state resistances $(\\sim \\gt 100 \\Omega)$ of a CBRAM/MIM RF switch. A technique of data encoding in electronically rewritable dipole resonators, by effectively modulating the impedance states of integrated CBRAM/MIM switches is presented herewith in detail. This example is presented through a model design of a 3bit rewritable chipless RFID tag.","PeriodicalId":438881,"journal":{"name":"2020 XXXIIIrd General Assembly and Scientific Symposium of the International Union of Radio Science","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 XXXIIIrd General Assembly and Scientific Symposium of the International Union of Radio Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/URSIGASS49373.2020.9232256","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this article we present the concept of a practical approach to realization of a fully passive electronically rewritable chipless RFID tag. Integrated non-volatile and solid state Conductive Bridging Random Access Memory (CBRAM) based Metal-Insulator-Metal (MIM) switches are used to realize the rewritable functionality. A solution to the primary challenge of requirement of obtaining very low ON states resistances $(\sim \lt 10 \Omega)$ in case of an RF switch, for efficient operating conditions is addressed in this paper. Here we propose a reconfigurable resonator design with a ground plane, which could operate efficiently for higher ON state resistances $(\sim \gt 100 \Omega)$ of a CBRAM/MIM RF switch. A technique of data encoding in electronically rewritable dipole resonators, by effectively modulating the impedance states of integrated CBRAM/MIM switches is presented herewith in detail. This example is presented through a model design of a 3bit rewritable chipless RFID tag.
基于非易失性CBRAM/MIM交换技术的电子可重写“射频条形码”的实用方法
在本文中,我们提出了实现完全无源电子可重写无芯片RFID标签的实用方法的概念。采用基于金属-绝缘体-金属(MIM)开关的集成非易失性和固态导电桥接随机存取存储器(CBRAM)实现可重写功能。本文解决了射频开关在高效工作条件下需要获得非常低的ON状态电阻$(\sim \lt 10 \Omega)$的主要挑战。在这里,我们提出了一种可重构的谐振器设计,该设计具有地平面,可以有效地工作于CBRAM/MIM射频开关的更高ON状态电阻$(\sim \gt 100 \Omega)$。本文详细介绍了一种通过有效调制集成CBRAM/MIM开关的阻抗状态来实现电子可重写偶极子谐振器中数据编码的技术。本实例通过一个3位可重写无芯片RFID标签的模型设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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