Ke Xu, Chengdong Wu, Xiaojun Tian, Haibo Yu, Z. Dong
{"title":"Large-scale assembly of single-walled carbon nanotube field effect transistor","authors":"Ke Xu, Chengdong Wu, Xiaojun Tian, Haibo Yu, Z. Dong","doi":"10.1109/3M-NANO.2012.6472967","DOIUrl":null,"url":null,"abstract":"This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimental research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3M-NANO.2012.6472967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimental research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved.