Numerical Simulations of FASnI3 based Solar Cell with the Variation of Absorber Layer Thickness

Abstract

Tin based solar cells are considered as a promising contender in the photovoltaic (PV) industry. However, the performance of PV devices based on Formamidinium tin iodide (FASnI3) material is still lagging and has yet to realize the high conversion efficiency. To explore the device performance, the impact of thickness variation has been studied. SCAPS-1D tool is used to perform all the device simulations. The proposed device structure of Cu/PEDOT: PSS + WO3/FASnI3/PC61Bm/FTO is designed. In this proposed work, the thickness of FASnI3 absorber is varied from 50 to 500 nm. After doing the variation, the device performance is optimized at 400 nm which provides higher PV parameters JSC of 24.78 mA/cm2, VOC of 0.951 V, FF of 78.75% and PCE of 16.74%. The reported results are providing the insight for further development of PV devices and can help to enhance the tin-based device performance.