A 90nm bulk BiCDMOS platform technology with 15–80V LD-MOSFETs for automotive applications

Abstract

This paper proposes a 90nm bulk BiCDMOS platform for automotive applications. In this platform, two types of characteristic deep trench isolations are introduced. One has a top-to-bottom air-gap which serves as a stable isolator against high voltage. Another has a tungsten plug which not only minimizes area and resistance for substrate grounding but also slims down a noise-blocking active barrier guard-ring. For an Neh LD-MOSFET, a resurf-enforcing p-type region is inserted to cancel the electric field intensification brought by little thermal treatment. The advanced 90nm rule is mainly applied to a logic area for chip-size reduction. This platform also provides analog-friendly devices such as HV BJTs, full-isolation diode and eFlash.