Photomodulation spectroscopy of Zn /spl delta/-doped GaAs

Abstract

Zn /spl delta/-doped GaAs was investigated by photomodulation spectroscopy. At the high-energy side of the fundamental band gap of GaAs, two transitions were observed, The potential and energy structure of Zn /spl delta/-doped GaAs were calculated self-consistently using effective mass approximation. The absorption coefficient of Zn /spl delta/-doped GaAs and its differential were also calculated. The energy positions of transitions from the first level of heavy and light holes are obtained respectively, The experimental and calculated results are in good agreement.