Galvanomagnetic Properties and Anomalous Hall Effect of n-InSb single Crystal and its Device

Abstract

Hall effect experimental procedures was used for determining the electrical resistivity, electron mobility (μe), carrier concentration (η), magnetoresistance (MR) and anomalous Hall effect (AH) as a function of temperature .The obtained curves are discussed in detail. The AH effect is defined as the zero field extrapolation of the high field data. An experiment illustrates the magnetic sensing ability of InSb single crystal was designed, where the InSb resistance value changed under applying external direct magnetic field, for insuring the high sensitivity to the magnetic field of such III-V material.