Protons irradiation effect on the performance of the InGaP/GaAs solar cell

Abstract

This study aims to analyze the effects of solar irradiation, especially protons from solar wind, on the parameters of the InGaP/GaAs solar cell set up in Low Earth Orbit (LEO). The internal effects produced resulting from irradiation were simulated using Ion implantation theory of SRIM (Stopping Range Ion in Matter) software. The results show that the increase in irradiation energy and fluency (dose) decreases significantly the output parameters of the InGaP/GaAs solar cell, open circuit voltage Vco, short-circuit current Icc, and the conversion efficiency η. The decrease in the current density Icc is due to the increase in the recombination, linked to the increase in the density of the defects.