"TANDEM-H bridge" a new approach towards low switching loss at high switching frequencies

A. Ahmad, F. Kamran
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引用次数: 1

Abstract

High frequency induction heating applications especially pipe/tube welding requires output power in the range of 100's of KW at frequencies ranging from 200 KHz to approx 1 MHz. The power frequency product poses a great challenge for designers in terms of semiconductor device selection and cost. Though power MOSFETs are the most popular choice, their lower current capacity and higher costs divert the attraction towards lower cost IGBT usage in modern day power electronic equipment, IGBT's being economical and having high current capacity, their use is limited by lower switching frequency. This paper presents a new topology that can enable designers to use IGBT's at higher frequencies while keeping the switching loss low.
“TANDEM-H桥”是在高开关频率下实现低开关损耗的新途径
高频感应加热应用,特别是管道/管焊接,需要在200 KHz至约1 MHz频率范围内输出功率在100 KW的范围内。工频产品在半导体器件选择和成本方面对设计人员提出了巨大的挑战。虽然功率mosfet是最受欢迎的选择,但其较低的电流容量和较高的成本转移了对现代电力电子设备中较低成本IGBT使用的吸引力,IGBT经济且具有高电流容量,但其使用受到较低开关频率的限制。本文提出了一种新的拓扑结构,使设计人员能够在较高频率下使用IGBT,同时保持较低的开关损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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