{"title":"A CMOS Envelope Detector for Low Power Wireless Receiver Applications","authors":"J. Ou, Pietro M. Ferreira","doi":"10.1109/NEWCAS.2018.8585458","DOIUrl":null,"url":null,"abstract":"Recent studies have shown that the power consumption of a wake-up receiver can be reduced by using an envelope detector as its first stage. Designing a low power envelope detector is challenging because of stringent requirements such as data rate, operating frequency, conversion gain and sensitivity. This paper describes the design of a 915 MHz envelope detector which uses a combination of active inductors and an input matching circuit to improve its conversion gain. The proposed design consumes 2 $\\mu \\mathrm{A}$ of bias current, achieves a 37.8 dB of conversion gain, a sensitivity of -60 dBm and a data rate of 200 kb/s in a 0.13 $\\mu \\mathrm{m}$ CMOS process.","PeriodicalId":112526,"journal":{"name":"2018 16th IEEE International New Circuits and Systems Conference (NEWCAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 16th IEEE International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2018.8585458","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Recent studies have shown that the power consumption of a wake-up receiver can be reduced by using an envelope detector as its first stage. Designing a low power envelope detector is challenging because of stringent requirements such as data rate, operating frequency, conversion gain and sensitivity. This paper describes the design of a 915 MHz envelope detector which uses a combination of active inductors and an input matching circuit to improve its conversion gain. The proposed design consumes 2 $\mu \mathrm{A}$ of bias current, achieves a 37.8 dB of conversion gain, a sensitivity of -60 dBm and a data rate of 200 kb/s in a 0.13 $\mu \mathrm{m}$ CMOS process.