SiGeC and InP HBT Compact Modeling for mm-Wave and THz Applications

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062466

M. Schroter, A. Pawlak, P. Sakalas, J. Krause, T. Nardmann

引用次数: 7

Abstract

An overview on compact transistor modeling for mm-wave HBT technologies is provided. Using HICUM as a vehicle, a comparison to experimental DC, AC and large-signal data is performed. Selected examples are shown for advanced SiGeC and InP HBTs with operating frequencies (fT, fmax) of (300, 500) GHz and (350, 450) GHz, respectively. Good agreement between model and measurements is obtained for all characteristics

查看原文本刊更多论文

用于毫米波和太赫兹应用的SiGeC和InP HBT紧凑建模

概述了毫米波HBT技术的紧凑晶体管建模。以HICUM为载体，与实验直流、交流和大信号数据进行了比较。给出了工作频率(fT, fmax)分别为(300,500)GHz和(350,450)GHz的高级SiGeC和InP hbt的选定示例。所有特性的模型和测量结果都很好地吻合

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

自引率

0.00%

发文量