Dual Resonance Circuits by Defected Ground Structure Resonators for Low Phase Noise K-Band CMOS VCO

R. Pokharel, Nusrat Jahan, A. Barakat
{"title":"Dual Resonance Circuits by Defected Ground Structure Resonators for Low Phase Noise K-Band CMOS VCO","authors":"R. Pokharel, Nusrat Jahan, A. Barakat","doi":"10.1109/RFIT.2018.8524088","DOIUrl":null,"url":null,"abstract":"We analyze the quality factor $(\\boldsymbol{Q_{U}}/\\boldsymbol{Q_{K}})$ of three different types of defected ground structure (DGS) resonators including a series resonance in addition to the parallel one. Then, we implement the resonators to design high-performance K-band VCOs in $0.18\\ {\\mu} \\mathbf{m}$ CMOS Technology and finally, a low phase noise VCO at K-band is introduced.","PeriodicalId":297122,"journal":{"name":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2018.8524088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We analyze the quality factor $(\boldsymbol{Q_{U}}/\boldsymbol{Q_{K}})$ of three different types of defected ground structure (DGS) resonators including a series resonance in addition to the parallel one. Then, we implement the resonators to design high-performance K-band VCOs in $0.18\ {\mu} \mathbf{m}$ CMOS Technology and finally, a low phase noise VCO at K-band is introduced.
低相位噪声k波段CMOS压控振荡器的缺陷接地结构双谐振电路
本文分析了三种不同类型的缺陷接地结构(DGS)谐振器的品质因子$(\boldsymbol{Q_{U}}/\boldsymbol{Q_{K}})$,其中包括串联谐振和并联谐振。然后,我们在$0.18\ {\mu} \mathbf{m}$ CMOS技术上实现了高性能k波段压控振荡器,最后介绍了k波段低相位噪声压控振荡器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信