Photoluminescence of InGaAs/InP quantum dots

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328268

S. Gu, E. Reuter, Q. Xu, R. Panepucci, H. Chang, A. Chen, I. Adesida, K. Cheng, S. G. Bishop

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Abstract

The spatial distribution of photo-excited carriers in dry etched InGaAs/InP quantum-well-dots (QWDs) has been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. High resolution e-beam lithography and CH/sub 4H/sub 2/ reactive ion etching were used to fabricate QWDs from multiple quantum well (MQW) heterostructures with GaAs well thicknesses ranging from 1 to 15 nm. Low temperature CL spectra from a single QWD stack provided a measure of the layer-to-layer variation in intensity in such MQW dots. Lateral distributions of emission intensity in single quantum dots and dot-to-dot variations in emission intensity have been obtained from CL line scans. The QWD PL intensity from the thicker, bottom QWDs in a stack is found to increase relative to the PL from the thinner, top QWDs with increasing excitation intensity and increasing temperature. This observation is attributed to the diffusion of carriers generated in the InP substrate into the bottom quantum wells. The PL spectra of all five 128 nm diameter QWDs in the MQW stacks exhibit a blueshift of about 3 meV at the lowest excitation intensity.<>

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InGaAs/InP 量子点的光致发光

通过光致发光 (PL) 光谱和阴极射线发光 (CL) 成像研究了干蚀刻 InGaAs/InP 量子阱点 (QWD) 中光激发载流子的空间分布。利用高分辨率电子束光刻和 CH/sub 4H/sub 2/ 反应离子刻蚀技术，从 GaAs 阱厚度为 1 至 15 nm 的多量子阱 (MQW) 异质结构中制造出了 QWD。单个 QWD 叠层的低温 CL 光谱可用于测量此类 MQW 点的层间强度变化。通过 CL 线扫描获得了单个量子点发射强度的横向分布以及点与点之间发射强度的变化。研究发现，随着激发强度的增加和温度的升高，堆栈中底部较厚量子点的聚光强度相对于顶部较薄量子点的聚光强度会增加。这一现象归因于 InP 衬底中产生的载流子扩散到底部量子阱。在最低激发强度下，MQW 堆中所有五个直径为 128 nm 的 QWD 的 PL 光谱都会出现约 3 meV 的蓝移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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