Gain Properties of Type-II AlInN / ZnGeN2 Quantum Wells for Ultraviolet Laser Diodes

2019 IEEE Photonics Conference (IPC) Pub Date : 2019-09-01 DOI:10.1109/IPCon.2019.8908493

Hanlin Fu, J. Goodrich, N. Tansu

引用次数: 0

Abstract

The material gain properties of type-II AlInN / ZnGeN2 QWs with different ZnGeN2 layer thicknesses are investigated through the self-consistent hp formalism. Our study shows ∼6.2 times enhancement in material gain compared to the conventional structure and remarkable reductions in threshold current and carrier densities.

查看原文本刊更多论文

紫外激光二极管ⅱ型AlInN / ZnGeN2量子阱的增益特性

通过自洽hp公式研究了不同ZnGeN2层厚度的ii型AlInN / ZnGeN2量子阱的材料增益特性。我们的研究表明，与传统结构相比，材料增益提高了约6.2倍，阈值电流和载流子密度显著降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2019 IEEE Photonics Conference (IPC)

自引率

0.00%

发文量