The new analytical subthreshold behavior model for dual material gate (DMG) SOI MESFET

Abstract

Based on the exact resultant solution of two dimensional Poisson equation, a new analytical subthreshold behavior model consisting of two dimensional potential, threshold voltage and subthreshold swing for the dual material gate (DMG) SOI MESFETs is developed. The model is verified by the good agreement when compared with the numerical simulation of device simulator MEDICI. The model not only offers the physical insight into device physics but also provides the efficient device model for the circuit simulation.