Study on Complementary Auxiliary Cathode Method for Improving the Microstructure Uniformity of Electroplated Thick Metal Film

T. Yin, Yunna Sun, Yan Wang, G. Ding, Mingyu Zhang
{"title":"Study on Complementary Auxiliary Cathode Method for Improving the Microstructure Uniformity of Electroplated Thick Metal Film","authors":"T. Yin, Yunna Sun, Yan Wang, G. Ding, Mingyu Zhang","doi":"10.1109/NEMS57332.2023.10190965","DOIUrl":null,"url":null,"abstract":"The uniformity of electroplating thick metal film in microstructure devices is an important factor affecting the surface quality, dimensional accuracy, performance and yield of devices. There are few studies on the traditional electroplating assisted cathode to improve the thickness uniformity of metal coating, and most of them use a single surrounding structure, which is difficult to adapt to the thickness uniformity improving of thick metal coating in complex microstructure devices. This paper presents a method for improving the uniformity of coating thickness by using complementary auxiliary cathode structure. A cross-shaped on-chip auxiliary cathode structure complementary to the mask pattern is designed to disperse the local over-concentrated current density. At the same time, the annular off-chip auxiliary cathode is combined to improve the uniformity of the same batch and single module at the wafer level and module level. A FEM model is established to optimize the structure, size and position distribution of the auxiliary cathode. The simulation results show that compared with the structure without auxiliary cathode, the uniformity between the components and inside the components of film thickness are improved by 90.1% and 55.9% respectively. This is of great significance to ensure the processing consistency and performance stability of thick metal film microstructure devices.","PeriodicalId":142575,"journal":{"name":"2023 IEEE 18th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 18th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS57332.2023.10190965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The uniformity of electroplating thick metal film in microstructure devices is an important factor affecting the surface quality, dimensional accuracy, performance and yield of devices. There are few studies on the traditional electroplating assisted cathode to improve the thickness uniformity of metal coating, and most of them use a single surrounding structure, which is difficult to adapt to the thickness uniformity improving of thick metal coating in complex microstructure devices. This paper presents a method for improving the uniformity of coating thickness by using complementary auxiliary cathode structure. A cross-shaped on-chip auxiliary cathode structure complementary to the mask pattern is designed to disperse the local over-concentrated current density. At the same time, the annular off-chip auxiliary cathode is combined to improve the uniformity of the same batch and single module at the wafer level and module level. A FEM model is established to optimize the structure, size and position distribution of the auxiliary cathode. The simulation results show that compared with the structure without auxiliary cathode, the uniformity between the components and inside the components of film thickness are improved by 90.1% and 55.9% respectively. This is of great significance to ensure the processing consistency and performance stability of thick metal film microstructure devices.
提高电镀厚金属膜组织均匀性的互补辅助阴极法研究
微结构器件中电镀厚金属膜的均匀性是影响器件表面质量、尺寸精度、性能和成品率的重要因素。传统的电镀辅助阴极提高金属镀层厚度均匀性的研究很少,大多采用单一的环绕结构,难以适应复杂微结构器件中厚金属镀层厚度均匀性的提高。提出了一种利用互补辅助阴极结构改善镀层厚度均匀性的方法。设计了一种与掩模图案互补的十字形片上辅助阴极结构,以分散局部过集中的电流密度。同时结合环形片外辅助阴极,在晶圆级和模组级提高了同批次和单模块的均匀性。建立了辅助阴极的有限元模型,优化了辅助阴极的结构、尺寸和位置分布。仿真结果表明,与没有辅助阴极的结构相比,元件之间和元件内部的膜厚均匀性分别提高了90.1%和55.9%。这对保证厚金属膜微结构器件的加工一致性和性能稳定性具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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