K. Litvin, J. Burm, D. Woodard, W. Schaff, L. F. Eastman
{"title":"High speed optical detectors for monolithic millimeter wave integrated circuits","authors":"K. Litvin, J. Burm, D. Woodard, W. Schaff, L. F. Eastman","doi":"10.1109/CORNEL.1993.303078","DOIUrl":null,"url":null,"abstract":"Metal-semiconductor-metal photodiodes with interdigitated Schottky barrier fingers are being developed for applications in monolithic optical receiver circuits with the purpose of detecting millimeter wave modulation signals being transmitted via an optical carrier. The devices are planar and incorporate submicron finger spacings and a thin absorption region for speed with a buried stack of tuned Bragg reflectors for enhanced sensitivity at the carrier wavelength. These devices are being integrated with short-gate MODFET amplifiers to form the complete monolithic integrated optical receiver circuit.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Metal-semiconductor-metal photodiodes with interdigitated Schottky barrier fingers are being developed for applications in monolithic optical receiver circuits with the purpose of detecting millimeter wave modulation signals being transmitted via an optical carrier. The devices are planar and incorporate submicron finger spacings and a thin absorption region for speed with a buried stack of tuned Bragg reflectors for enhanced sensitivity at the carrier wavelength. These devices are being integrated with short-gate MODFET amplifiers to form the complete monolithic integrated optical receiver circuit.<>