Circular Cross Kelvin Resistor test structure for low specific contact resistivity

S. Luong, M. Alnassar, Pan Yue, A. Holland, F. Algahtani
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Abstract

In determining the specific contact resistance of an Ohmic contact, using conventional Cross Kelvin Resistor (CKR) test structures, the errors in doing so occur from parasitic resistances around the contact. These parasitic resistances are difficult to determine because no convenient analytical expression is available to calculate this resistance. However, electrical current entering a circular contact uniformly from all directions can be modeled using analytical expressions. Here we present a new test structure where parasitic resistance can easily be calculated because it occurs between concentric equipotentials. This resistance is then subtracted from the total resistance to give the resistance due to the contact interface and hence the specific contact resistance of that interface. Using aspects of the CKR and the Circular Transmission Line Model (CTLM) we have designed a new test structure, here called the Circular Cross Kelvin Resistor (CCKR) test structure for determining specific contact resistance.
圆形十字开尔文电阻测试结构低比接触电阻率
在确定欧姆触点的特定接触电阻时,使用传统的交叉开尔文电阻(CKR)测试结构,这样做的误差来自触点周围的寄生电阻。这些寄生电阻很难确定,因为没有方便的解析表达式可用来计算这种电阻。然而,从各个方向均匀进入圆形触点的电流可以用解析表达式来建模。在这里,我们提出了一种新的测试结构,寄生电阻可以很容易地计算,因为它发生在同心等电位之间。然后从总电阻中减去这个电阻,得到由于接触界面产生的电阻,从而得到该界面的比接触电阻。利用CKR和圆形传输线模型(CTLM)的各个方面,我们设计了一个新的测试结构,这里称为圆形交叉开尔文电阻(CCKR)测试结构,用于确定特定的接触电阻。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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