{"title":"Metal-insulator-Si hybrid plasmonic waveguide components for on-chip photonics","authors":"Shiyang Zhu, G. Lo, D. Kwong","doi":"10.1109/APCAP.2012.6333181","DOIUrl":null,"url":null,"abstract":"Vertical Cu-SiO2-Si hybrid plasmonic components are experimentally demonstrated on a SOI platform using standard CMOS technology. The hybrid plasmonic waveguide (HPW) exhibits relatively low propagation loss of ~0.12 dB/μm and high coupling efficiency of ~86% with the conventional Si waveguides. The plasmonic waveguide-ring resonator with a compact radius of 1.59 μm exhibits high performance such as large extinction ratio of ~18 dB, small bandwidth of ~4 nm, and large free spectral range of ~74 nm. These superior performances as well as the fully CMOS compatibility make them promising building blocks for silicon electronic-photonic integrated circuits for data communications and sensing applications.","PeriodicalId":178493,"journal":{"name":"2012 IEEE Asia-Pacific Conference on Antennas and Propagation","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Asia-Pacific Conference on Antennas and Propagation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCAP.2012.6333181","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Vertical Cu-SiO2-Si hybrid plasmonic components are experimentally demonstrated on a SOI platform using standard CMOS technology. The hybrid plasmonic waveguide (HPW) exhibits relatively low propagation loss of ~0.12 dB/μm and high coupling efficiency of ~86% with the conventional Si waveguides. The plasmonic waveguide-ring resonator with a compact radius of 1.59 μm exhibits high performance such as large extinction ratio of ~18 dB, small bandwidth of ~4 nm, and large free spectral range of ~74 nm. These superior performances as well as the fully CMOS compatibility make them promising building blocks for silicon electronic-photonic integrated circuits for data communications and sensing applications.