Hybrid simulation using functional single-electron transistor models

A. Sarmiento-Reyes, F. Gonzalez, L. Luis
{"title":"Hybrid simulation using functional single-electron transistor models","authors":"A. Sarmiento-Reyes, F. Gonzalez, L. Luis","doi":"10.1109/LASCAS.2011.5750286","DOIUrl":null,"url":null,"abstract":"Recent advances in the fabrication of single-electron devices (SEDs) and the forthcoming combination of them with nanometric CMOS transistors to form hybrid circuits forcibly put in scene the need of solid and robust simulation methodologies for these classes of circuits. In this paper a verification path that incorporates functional models for the SEDs in order to achieve simulation of bybrid circuits is expound. Several examples illustrate the application of the verification methodology.","PeriodicalId":137269,"journal":{"name":"2011 IEEE Second Latin American Symposium on Circuits and Systems (LASCAS)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Second Latin American Symposium on Circuits and Systems (LASCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LASCAS.2011.5750286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Recent advances in the fabrication of single-electron devices (SEDs) and the forthcoming combination of them with nanometric CMOS transistors to form hybrid circuits forcibly put in scene the need of solid and robust simulation methodologies for these classes of circuits. In this paper a verification path that incorporates functional models for the SEDs in order to achieve simulation of bybrid circuits is expound. Several examples illustrate the application of the verification methodology.
使用功能单电子晶体管模型的混合仿真
单电子器件(SEDs)制造的最新进展,以及即将与纳米CMOS晶体管结合形成混合电路,使得这些电路需要可靠和强大的模拟方法。本文阐述了一种结合功能模型的动态动态控制器的验证路径,以实现混合电路的仿真。几个例子说明了验证方法的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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