Visible Wavelength Photonic Insulator for Enhancing LED Light Emission

K. Ryoo, Jeong‐Bong Lee
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Abstract

We report design and simulation of a two-dimensional (2D) silicon-based nanophotonic crystal as an optical insulator to enhance the light emission efficiency of light-emitting diodes (LEDs). The device was designed in a manner that a triangular array silicon photonic crystal light insulator has a square trench in the middle where LED can be placed. By varying the normalized radius in the range of 0.3?0.5 using plane wave expansion method (PWEM), we found that the normalized radius of 0.45 creates a large band gap for transverse electric (TE) polarization. Subsequently a series of light propagation simulation were carried out using 2D and three-dimensional (3D) finite-difference time-domain (FDTD). The designed silicon-based light insulator device shows optical characteristics of a region in which light propagation was forbidden in the horizontal plane for TE light with most of the visible light spectrum in the wavelength range of 450 nm to 600 nm.
增强LED发光的可见波长光子绝缘体
我们设计和模拟了一种二维(2D)硅基纳米光子晶体作为光绝缘体,以提高发光二极管(led)的发光效率。该器件的设计方式是,三角形阵列硅光子晶体光绝缘体中间有一个方形沟槽,可以放置LED。通过平面波展开法(PWEM)在0.3 ~ 0.5范围内改变归一化半径,我们发现0.45的归一化半径会产生较大的横向电(TE)极化带隙。随后,利用二维和三维时域有限差分(FDTD)进行了一系列的光传播模拟。所设计的硅基光绝缘体器件对大部分可见光谱在450 nm ~ 600 nm波长范围内的TE光具有水平面禁止光传播区域的光学特性。
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